File Sphalerite unit cell depth fade 3D balls.png thumb The crystal structure of aluminiumgalliumarsenide is Zincblende crystal structure zincblende . Aluminiumgalliumarsenide also aluminum galliumarsenideAluminium Al sub x sub gallium Ga sub 1 x sub arsenic As is a semiconductor material with very nearly the same lattice constant as Galliumarsenide GaAs , but a larger bandgap . The x in the formula above is a number between 0 and 1 this indicates an arbitrary alloy between Galliumarsenide GaAs and Aluminiumarsenide AlAs . The bandgap varies between 1.42 electron volt eV GaAs and 2.16 eV AlAs . For x 0.4, the direct bandgap bandgap is direct . The formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio. Aluminiumgalliumarsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a galliumarsenide region. An example of such a device is a quantum well infrared photodetector QWIP . It can also be used in 1064 nm Infra red laser diode s. Safety and toxicity aspects The toxicology of AlGaAs has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminiumgalliumarsenide sources such as trimethylgallium and arsine and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review. ref cite journal author Shenai Khatkhate, D. V. Goyette, R. J. DiCarlo, R. L. Jr. Dripps, G. journal Journal of Crystal Growth year 2004 volume 272 issue 1 4 pages 816 821 doi 10.1016 j.jcrysgro.2004.09.007 title Environment, Health and Safety Issues for Sources Used ... As publisher FTI im. A. F. Ioffe, RAN location Sankt Peterburg DEFAULTSORT AluminiumGalliumArsenide Category Arsenides Category Aluminium compounds Category Gallium compounds Category Semiconductor ... de Aluminiumgalliumarsenid es Arseniuro de galio aluminio fr Ars niure de galliumaluminium it Arseniuro ... more details
arsenide in combination with aluminiumarsenide AlAs or the alloy Aluminiumgalliumarsenide Al ... colbegin 3 AluminiumarsenideAluminiumgalliumarsenide Arsine Cadmium telluride Gallium antimonide Galliumarsenide phosphide Gallium manganese arsenideGallium phosphide Gallium nitride Heterostructure emitter bipolar transistor Indium arsenide Indium galliumarsenide Indium phosphide Light emitting ...Chembox Verifiedfields changed verifiedrevid 476995185 ImageFile1 Galliumarsenide unit cell 3D balls.png ImageFile Ref chemboximage correct ?? ImageSize 244 ImageFile2 Galliumarsenide crystal.jpg ImageFile1 Ref chemboximage correct ?? ImageSize1 244 ImageName1 Samples of galliumarsenide PIN Gallium ... EINECS 215 114 8 UNNumber 1557 MeSHName galliumarsenide RTECS LW8800000 SMILES Ga As StdInChI ... SPhrases S1 2 , S20 21 , S28 , S45 , S60 , S61 NFPA F 1 NFPA H 3 NFPA R 2 NFPA O W Galliumarsenide ... a 3 oxidation state . Galliumarsenide can be prepared by direct reaction from the elements, as used ... with a hydroxamic acid HA , for example ref Oxidative dissolution of galliumarsenide and separation ... GaAs advantages Some electronic properties of galliumarsenide are superior to those of silicon . It has ... galliumarsenide transistors to function at frequencies in excess of 250 GHz. Unlike silicon .... File MidSTAR 1.jpg thumb upright High efficiency, triple junction galliumarsenide solar cells covering ... of GaAs is for high efficiency solar cell s. Galliumarsenide GaAs is also known as single crystalline ... crystal s of galliumarsenide can be manufactured by the Bridgeman technique , as the Czochralski .... Safety The toxicological properties of galliumarsenide have not been thoroughly investigated ..., health and safety aspects of galliumarsenide sources such as trimethylgallium and arsine ... 2004JCrGr.272..816S ref California lists galliumarsenide as a carcinogen. ref Cite web title Chemicals ... Toxicity galliumarsenide, hexafluoroacetone, nitrous oxide and vinyl cyclohexene dioxide date 2008 ... more details
OtherAnions OtherCations OtherFunctn Aluminiumgalliumarsenide , Aluminium indium arsenide , Aluminium antimonide , Boron arsenide Function semiconductor materials OtherCpds Aluminiumarsenide or aluminum arsenideAluminium arsenic is a semiconductor material with almost the same lattice constant as galliumarsenide and aluminiumgalliumarsenide and wider band gap than galliumarsenide. Aluminium arsenic can form a superlattice with galliumarsenidegallium arsenic which results in its semiconductor ...chembox verifiedrevid 444428416 Name Aluminiumarsenide ImageFile Boron phosphide unit cell 1963 CM 3D ... Arsenide Clusters. Journal of Nanoparticle Research. Vol. 13 Issue 5 pg. 2029 2039. 2011. ref Because gallium arsenic and Aluminium arsenic have almost the same lattice constant, the layers have ... ja ru simple Aluminiumarsenide uk zh ... 0.17x 10 sup 22 sup ref name multiple Dierks, S.. Aluminum Arsenide MATERIAL SAFETY DATA. The Fitzgerald ... modulus 7.55 0.26x 10 sup 11 sup dyn cm sup 2 sup ref name multiple Dierks, S.. Aluminum Arsenide MATERIAL ... . ref Hardness on the Mohs scale 5 ref name multiple Dierks, S.. Aluminum Arsenide ... aluminumarsenide.pdf . ref Insolubility in H sub 2 sub O ref name multiple Dierks, S.. Aluminum Arsenide ... aluminumarsenide.pdf . ref Uses Aluminum arsenide is a III V compound semiconductor material and is an advantageous ... diodes . ref Minden, H. T. Some Optical Properties of Aluminum Arsenide. Applied Physics Letters. Vol. 17, Issue 9. pg. 358 360. 1970. ref Similar compounds such as galliumarsenide , gallium phosphide , or gallium arsenidephosphide, are widely used in such manufacture, but the application of aluminum arsenide has been limited. The limitations in the application of aluminum arsenide are caused by difficulties ... . U.S. Patent No. 4002505. Washington, DC U.S. Patent and Trademark Office. ref Aluminum arsenide ... or melt growth techniques. However, aluminum arsenide crystals prepared by these methods are generally ... more details
Galliumarsenide phosphide Gallium Arsenic sub 1 x sub Phosphorus sub x sub is a semiconductor material , an alloy of galliumarsenide and gallium phosphide . It exists in various composition ratios indicated in its formula by the fraction x . Galliumarsenide phosphide is used for manufacturing red, orange and yellow light emitting diode s. It is often grown on gallium phosphide substrates to form a GaP GaAsP heterostructure . In order to tune its electronic properties, it may be doping semiconductors doped with nitrogen GaAsP N ref Characteristics of Nitrogen Doped GaAsP Light Emitting Diodes, Tadashige Sato and Megumi Imai, Jpn. J. Appl. Phys. vol. 41 pp. 5995 5998 2002 doi 10.1143 JJAP.41.5995 ref . See also GalliumarsenideGallium phosphide Indium galliumarsenide phosphide Indium gallium phosphide Aluminiumgalliumarsenide phosphide Gallium indium arsenide antimonide phosphide References references External links Category Semiconductor materials Category Gallium compounds Category Arsenides Category Phosphides Category III V compounds Category Light emitting diode materials condensedmatter stub fr Phospho ars niure de gallium pl Fosforo arsenek galu ... more details
Aluminium indium arsenide , also indium aluminiumarsenide or AlInAs Aluminium Al sub x sub indium In sub 1 x sub arsenic As , is a semiconductor material with very nearly the same lattice constant as Gallium indium arsenide GaInAs , but a larger bandgap . The x in the formula above is a number between 0 and 1 this indicates an arbitrary alloy between indium arsenide InAs and Aluminiumarsenide AlAs . The formula AlInAs should be considered an abbreviated form of the above, rather than any particular ratio. Aluminium indium arsenide is used e.g. as a buffer layer in HEMT metamorphic HEMT transistors, where it serves to adjust the lattice constant differences between the GaAs substrate and the GaInAs channel. It can be also used to form alternate layers with indium galliumarsenide , which act as quantum well s these strcuctures are used in e.g. broadband quantum cascade laser s. Safety and toxicity aspects The toxicology of AlInAs has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium arsenide sources such as trimethylindium and arsine and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review ref Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors D V Shenai Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1 4, pp. 816 821 2004 doi 10.1016 j.jcrysgro.2004.09.007 ref . References references External links DEFAULTSORT Aluminium Indium Arsenide Category Semiconductor materials Category III V compounds Category Arsenides Category Aluminium compounds Category Indium compounds ar ... more details
Indium galliumarsenide InGaAs is a semiconductor composed of indium , gallium and arsenic . It is used in high power and high frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and galliumarsenide . InGaAs bandgap also makes it the detector material of choice in optical fiber communication at 1300 and 1550 nanometer nm . Gallium indium arsenide GaInAs is an alternative name for InGaAs. Indium galliumarsenide was synthesized by T.P. Pearsall in 1976, who was the first to realize that single crystal indium galliumarsenide could be grown epitaxially on InP. Pearsall is credited with the determination of the band gap, the effective masses of electrons and holes, electron and hole mobilities and other fundamental properties of indium galliumarsenide. In 1978, Pearsall demonstrated the first high performance p i n detector, and two years later the uni traveling carrier utc photodiode. Both devices are currently widely used in optical fibre telecommunications. The indium content determines the two dimensional charge carrier density. Properties Image InGaAs Energy band composition.PNG right thumb 500px Energy gap versus gallium composition for InGaAs The optical and mechanical properties of InGaAs can be varied by changing the ratio of In and Ga, In sub x sub Ga sub 1 x sub As. ref http www.sensorsinc.com GaAs.html Technology What is InGaAs? ref The InGaAs device is normally grown on an indium phosphide InP substrate. In order to match the lattice constant of InP and avoid mechanical strain, In sub 0.53 sub Ga ... and lungs. The environment, health and safety aspects of indium galliumarsenide sources such as trimethylgallium ... j.jcrysgro.2004.09.007 bibcode 2004JCrGr.272..816S ref See also indium gallium phosphide Indium gallium zinc oxide galliumarsenide indium arsenide References Reflist External links http www.ioffe.rssi.ru ..., Russia DEFAULTSORT Indium GalliumArsenide Category Indium compounds Category Gallium compounds Category ... more details
Aluminiumgallium indium phosphide Aluminum Gallium Indium Phosphorus , also AlInGaP , InGaAlP , etc. is a semiconductor material . AlGaInP is used in manufacture of light emitting diode s of high brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode laser s. AlGaInP layer is often grown by heteroepitaxy on galliumarsenide or gallium phosphide in order to form a quantum well structure. Safety and toxicity aspects The toxicology of AlInGaP has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium gallium phosphide sources such as trimethylgallium , trimethylindium and phosphine and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review ref Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors D V Shenai Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1 4, pp. 816 821 2004 doi 10.1016 j.jcrysgro.2004.09.007 ref . See also Indium phosphide Gallium indium phosphide Aluminiumgallium phosphide Indium galliumarsenide phosphide References reflist Notes refbegin Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto optical spectroscopy, I J Griffin, D Wolverson, J J Davies, M Emam Ismail, J Heffernan, A H Kean, S W Bland and G Duggan, Semicond. Sci. Technol. vol. 15 pp. 1030 1034 2000 doi 10.1088 0268 1242 15 11 303 High Brightness Light Emitting Diodes G. B. Stringfellow and M. George Craford, Semiconductors and Semimetals, vol. 48, pp. 97 226. refend DEFAULTSORT AluminiumGallium Indium Phosphide Category Semiconductor materials Category Aluminium compounds Category Gallium compounds Category Indium compounds Category Phosphides Category III V compounds Category Light emitting diode materials ar ... more details
Gallium manganese arsenide is a magnetic semiconductor . It is based on the world s second favorite semiconductor , GaAs , and as such is readily compatible with existing semiconductor technologies. Differently from other Magnetic semiconductor dilute magnetic semiconductors DMSs , such as the majority of those based on II VI semiconductors , it is not Paramagnetism paramagnetic . ref name furdyna diluted 1988 Cite journal volume 64 issue 4 pages R29 R64 last Furdyna first J. K. title Diluted magnetic semiconductors journal Journal of Applied Physics year 1988 url http link.aip.org link ?JAP 64 R29 1 doi 10.1063 1.341700 bibcode 1988JAP....64...29F ref but Ferromagnetism ferromagnetic , and hence exhibits hysteretic magnetization behavior. This memory effect is of importance for the creation of persistent devices. In Ga,Mn As, the manganese atoms provide a magnetic moment, and each also acts as an Acceptor semiconductors acceptor , making it a p type material. The presence of Charge carrier carriers allows the material to be used for Spin polarization spin polarized currents. In contrast, many other Ferromagnetism ferromagnetic Magnetic semiconductor DMSs are strongly insulating ref name ohno magnetotransport 1992 Cite journal doi 10.1103 PhysRevLett.68.2664 volume 68 issue 17 pages 2664 2667 last Ohno first H. coauthors H. Munekata, T. Penney, S. von Moln r, L. L. Chang title Magnetotransport properties of p type In,Mn As diluted magnetic III V semiconductors journal Physical Review Letters date 1992 04 27 url http link.aps.org abstract PRL v68 p2664 pmid 10045456 bibcode 1992PhRvL .... E. C. Wood, Jr. Evans title Manganese incorporation behavior in molecular beam epitaxial galliumarsenide .... In Ga,Mn As the manganese substitute into gallium sites in the GaAs crystal and provide a magnetic ... atoms in the zinc blende lattice structure and the latter is where an arsenic atom occupies a gallium ... Semiconductor materials Category Ferromagnetic materials Category Gallium compounds Category Arsenides ... more details
Aluminiumgallium phosphide , Al,Ga P, a phosphide of aluminium and gallium , is a semiconductor material . It is an alloy of aluminium phosphide and gallium phosphide . It is used to manufacture light emitting diode s emitting green light. See also Aluminiumgallium indium phosphide External links http www.azooptics.com details.asp?ArticleID 34 Light Emitting Diode An Introduction, Structure, and Applications of LEDs Category Aluminium compounds Category Gallium compounds Category Phosphides Category Semiconductor materials Category III V compounds Condensed matter stub ar ... more details
Gallium indium arsenide antimonide phosphide Gallium Indium Arsenic Antimony Phosphorus or GaInPAsSb is a semiconductor material . Research has shown that GaInAsSbP can be used in the manufacture of mid infrared light emitting diode s ref Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes, A. Krier, V. M. Smirnov, P. J. Batty, V. I. Vasil ev, G. S. Gagis, and V. I. Kuchinskii, Appl. Phys. Lett. vol. 90 pp. 211115 2007 doi 10.1063 1.2741147 ref ref Lattice matched GaInPAsSb InAs structures for devices of infrared optoelectronics, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus , G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, Semiconductors vol. 36 num. 8 pp. 944 949 2002 doi 10.1134 1.1500478 ref and thermophotovoltaic cells ref Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic Diodes, K. J. Cheetham, P. J. Carrington, N. B. Cook and A. Krier, Solar Energy Materials and Solar Cells, vol. 95 pp. 534 537 2011 doi 10.1016 j.solmat.2010.08.036 ref . GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide , gallium antimonide and other materials. The exact composition can be tuned in order to make it Lattice constant lattice matched . The presence of five elements in the alloy allows extra degrees of freedom, making it possible to fix the lattice constant while varying the bandgap . See also Aluminiumgallium phosphide Aluminiumgallium indium phosphide Indium galliumarsenide phosphide Indium arsenide antimonide phosphide References references External links Category Semiconductor materials Category Gallium compounds Category Indium compounds Category Arsenic compounds Category Antimony compounds Category Phosphides Category III V compounds Condensedmatter stub ... more details
Indium galliumaluminium nitride InGaAlN is a GaN based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto electronics applications, often in blue laser diodes and LEDs. inorganic compound stub Category Indium compounds Category Gallium compounds Category Aluminium compounds Category Nitrides ... more details
Aluminiumgallium nitride AlGaN is a semiconductor material . It is an alloy of aluminium nitride and gallium nitride . AlGaN is used to manufacture light emitting diode s operating in blue to ultraviolet region, where wavelengths down to 250 nm far UV were achieved. It is also used in blue semiconductor laser s. It is also used in detectors of ultraviolet radiation, and in AlGaN GaN HEMT transistors. AlGaN is often used together with gallium nitride or aluminium nitride , forming heterojunction s. AlGaN layers can be also grown on sapphire . Safety and toxicity aspects The toxicology of AlGaN has not been fully investigated. The AlGaN dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminiumgallium nitride sources such as trimethylgallium and ammonia and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review ref cite journal title Environment, Health and Safety Issues for Sources Used in MOVPE Growth of Compound Semiconductors author Shenai Khatkhate, D. V. Goyette, R. DiCarlo, R. L. Jr. and Dripps, G. journal Journal of Crystal Growth volume 272 issue 1 4 pages 816 821 year 2004 doi 10.1016 j.jcrysgro.2004.09.007 ref . References reflist External links DEFAULTSORT AluminiumGallium Nitride Category Semiconductor materials Category Aluminium compounds Category Gallium compounds Category Nitrides Category III V compounds Category Light emitting diode materials ar fr Nitrure d aluminium et de gallium ... more details
Ionbox Section1 Chembox Identifiers ChemSpiderID 10605727 ChemSpiderID Ref chemspidercite correct chemspider SMILES As 3 StdInChI 1S As q 3 StdInChI Ref stdinchicite correct chemspider StdInChIKey PVBJMPGOALGYQS UHFFFAOYSA N StdInChIKey Ref stdinchicite correct chemspider Section2 Chembox Properties Formula Chem As 3 MolarMass 74.9216 g mol sup 1 sup ExactMass 74.921596417 g mol sup 1 sup Section3 Chembox Related OtherAnions Bismuthide Arsenide is an arsenic anion with the charge &minus 3. The trianion is formed by the reduction of arsenic by three electrons. For example heating arsenic powder with excess sodium gives sodium arsenide Na sub 3 sub As . The anions have no existence in solution since they are extremely basic. These solid salts have very high lattice energy lattice energies . An arsenide compound is a compound with arsenic in oxidation state &minus 3, but the term is used loosely. The mineral sperrylite PtAs sub 2 sub is called a platinum arsenide , but the formal oxidation state for arsenic is &minus 2. because the solid is usually described as Pt sup 4 sup ,As sub 2 sub sup 4 sup . The description of gallium arsenide GaAs is more straightforward since it features isolated arsenic centers. Arsenides are toxic because of the inherent toxicity of arsenic and all of its compounds. Metal arsenides react with acids to form highly toxic arsine gas. See Category Arsenides category for a list. See also Arsenide mineral External links Category Anions Category Arsenides Inorganic compound stub ar de Arsenide es Arseniuro fr Ars niure nl Arsenide ja pt Arsenieto uk vi Asenua zh simple Arsenide ... more details
2008 11 20 first Deborah A. last Kramer ref Worldwide, galliumarsenide makes up 95 of the annual global gallium consumption. ref name Moskalyk Galliumarsenide is used in optoelectronics in a variety of infrared applications. Aluminiumgalliumarsenide AlGaAs is used in high powered infrared laser ... s, the major use compound is galliumarsenide used in microwave circuitry and infrared ... of Aluminium Al Zinc Zn alloy s ref Cite journal title Grain boundary imaging, gallium diffusion ... , galliumarsenide is a semiconductor commonly used in light emitting diode s. High purity gallium is dissolved ... ampoule. The only two economic sources for gallium are as byproduct of aluminium and zinc production ... cost commercial availability of the extremely high purity 99.9999 metal. Galliumarsenide GaAs ... circuits mostly galliumarsenide , such as the manufacture of ultra high speed logic chips and MESFET ... phase epitaxy of thin film s of galliumarsenide, indium gallium phosphide or indium galliumarsenide .The Mars Exploration Rover s and several satellites use triple junction galliumarsenide on germanium ... date February 2011 A number of other galliumaluminium alloys are also usable for the purpose of essentially ... with water the resultant aluminium oxide and gallium mixture must be reformed back into electrodes ... into smelting the aluminium could be recovered by a hydrogen fuel cell. Biomedical applications Gallium ... Cite book title Chemistry of aluminium, gallium, indium, and thallium author Anthony John Downs publisher ... arsenide GaAs , and gallium antimonide GaSb . These compounds have the same structure as zinc ... ref GaCl chem GaCl 3 chem Ga GaCl 4 Hydrogen compounds Like aluminium , gallium also forms a hydride ...distinguish Galium About the chemical element Infobox galliumGallium IPAc en icon l i m respell GAL ee m is a chemical element that has the symbol Ga and atomic number 31. Elemental gallium does not occur in nature, but as the gallium III salt in trace amounts in bauxite and zinc ores. A soft ... more details
chembox verifiedrevid 428779018 Name Boron Arsenide ImageFile Boron arsenide unit cell 1963 CM 3D balls.png ImageSize 200px ImageName BAs ImageFile B12As2 3D side view.jpg ImageSize 200px ImageName B sub 12 sub As sub 2 sub Section1 Chembox Identifiers CASNo Ref cascite correct ?? CASNo 12005 69 5 Section2 Chembox Properties Formula BAs or B sub 12 sub As sub 2 sub MolarMass 85.733 g mol Appearance Density 5.22 g cm sup 3 sup , solid Solubility Insoluble MeltingPtC 2027 BoilingPtC BandGap 1.50 eV BAs 3.47 eV B sub 12 sub As sub 2 sub Section4 Chembox Thermochemistry DeltaHf Entropy Section7 Chembox Hazards EUClass N A RPhrases SPhrases Section8 Chembox Related OtherAnions Boron nitride br Boron phosphide br Boron antimonide OtherCations Aluminiumarsenide br Galliumarsenide br Indium arsenide Boron arsenide is a chemical compound of boron and arsenic . It is a cubic sphalerite semiconductor with a lattice constant of 0.4777 nm and an indirect bandgap of roughly 1.5 eV. It can be alloyed with galliumarsenide . Boron arsenide also occurs as an icosahedral boride, B sub 12 sub As sub 2 sub . ref cite web url http spectra.phy.bris.ac.uk research semiconductor.asp title Semiconductor Research publisher University Bristol, Applied Spectroscopy Group ref It belongs to R 3m space group with a rhombohedral structure based on clusters of boron atoms and two atom As As chains. It s a wide bandgap semiconductor 3.47 eV with the extraordinary ability to self heal radiation damage. This form can be grown on substrates such as silicon carbide . Applications Solar cell s can be fabricated from boron arsenide. It s also an attractive choice for devices exposed to radiation which can severely degrade the electrical properties of conventional semiconductors, causing devices to cease functioning. Among the particularly intriguing possible applications for B sub 12 sub As sub 2 sub ... P. D. authorlink coauthors year 1975 month title Ordered Boron Arsenide journal Journal of the American ... more details
Gallium nitride br Galliumarsenide br Gallium antimonide OtherCations Aluminium phosphide br Indium phosphide Gallium phosphide Gallium Phosphorus , a phosphide of gallium , is a compound ... wafers. See also Related materials GalliumarsenideGallium nitride Indium phosphide Alloys Aluminiumgallium indium phosphide Indium gallium phosphide Galliumarsenide phosphide External links .... It is used standalone or together with galliumarsenide phosphide . Pure GaP LEDs emit green ... . Gallium phosphide has applications in optical systems. Its refractive index is between 4.30 at 262 ... ?group CRYSTALS&material GaP ref Light emitting diodes Gallium phosphide is used in the manufacture ... oxide doped GaP emits red 700 nm . Gallium phosphide is transparent for yellow and red light, therefore GaAsP on GaP LEDs are more efficient than GaAsP on galliumarsenide GaAs . At temperatures above 900 C, gallium phosphide dissociates and the phosphorus escapes as a gas. In crystal growth ... Gallium compounds Category Semiconductor materials Category Optical materials Category Gallium compounds ... de Galliumphosphid fa fr Phosphure de gallium pl Fosforek galu ru ... more details
OtherCations Galliumarsenide OtherFunctn Function OtherCpds Indium arsenide , InAs , or indium monoarsenide ... temperature as well. Indium arsenide is also used for making of diode laser s. Indium arsenide is similar to galliumarsenide and is a direct bandgap material. Indium arsenide is sometimes used together with indium phosphide . Alloyed with galliumarsenide it forms indium galliumarsenide a material ... dember emitter. Quantum dot s can be formed in a monolayer of indium arsenide on indium phosphide or galliumarsenide. The mismatches of lattice constant s of the materials create tensions in the surface ... archivedate 2006 10 18 ref Quantum dots can also be formed in indium galliumarsenide, as indium arsenide dots sitting in the galliumarsenide matrix. References Refimprove date May 2009 reflist ... SVA NSM Semicond InAs thermal.html title Thermal properties of Indium Arsenide InAs accessdate 2011 11 22 ref Indium arsenide is used for construction of infrared detector s, for the wavelength ... with gallium nitride to yield indium gallium nitride . InAs is well known for its high electron mobility ... more details
chembox Watchedfields changed verifiedrevid 396140689 ImageFile Sphalerite unit cell 3D balls.png IUPACName Gallium III antimonide OtherNames Gallium antimonide Section1 Chembox Identifiers ChemSpiderID Ref chemspidercite correct chemspider ChemSpiderID 3436915 InChI 1 Ga.Sb rGaSb c1 2 InChIKey VTGARNNDLOTBET KXXLTECTAC StdInChI Ref stdinchicite correct chemspider StdInChI 1S Ga.Sb StdInChIKey Ref stdinchicite correct chemspider StdInChIKey VTGARNNDLOTBET UHFFFAOYSA N CASNo Ref cascite correct CAS CASNo 12064 03 8 PubChem 4227894 SMILES Ga Sb Section2 Chembox Properties Formula GaSb MolarMass 191.483 g mol Appearance Density 5.614 g cm sup 3 sup MeltingPt 712 C BoilingPt Solubility insoluble BandGap 0.726 eV 300 K ElectronMobility 3000 cm sup 2 sup V s 300 K SpecRotation MagSus ThermalConductivity 0.32 W cm K 300 K RefractIndex 3.8 Section3 Chembox Structure MolShape CrystalStruct Sphalerite , Pearson symbol cF8 SpaceGroup F 43m, No. 216 Section7 Chembox Hazards MainHazards NFPA H 1 NFPA F 0 NFPA R 0 NFPA O FlashPt non flammable Autoignition Gallium antimonide GaSb is a semiconductor semiconducting compound of gallium and antimony of the III V family. It has a lattice constant of about 0.61 nanometre nm . Applications GaSb can be used for Infrared detector s, infrared LED s and semiconductor laser lasers and transistors , and thermophotovoltaic systems. See also Aluminium antimonide Indium antimonide Gallium arsenide External links http www.ioffe.rssi.ru SVA NSM Semicond GaSb properties listed at NSM , Ioffe Institute. http www.onr.navy.mil 02 matoc onr docs pa1 pa1 005.doc National Compound Semiconductor Roadmap at the Office of Naval Research Gallium compounds Category Semiconductor materials Category Gallium compounds Category Antimonides Category III V compounds material stub ar de Galliumantimonid es Antimoniuro de galio fa fr Antimoniure de gallium it Antimoniuro di gallio pl Antymonek galu ru ... more details
About the metallic element pp vandalism small yes pp move indef SPELLING OF ALUMINIUM Please see the talk page, this article is written using the IUPAC spelling of aluminium and so ium should be used. The article ... names, so sulfur , etc. should be maintained. Infobox aluminiumAluminium IPAc en icon l j u ... Al , and its atomic number is 13. It is not soluble in water under normal circumstances. Aluminium ... up about 8 by weight of the Earth s solid surface. Aluminium metal is too reactive chemically to occur ... 03 04 ref The chief ore of aluminium is bauxite . Aluminium is remarkable for the metal s low density ... made from aluminium and its aluminium alloy alloys are vital to the aerospace industry and are important in other areas of transport ation and structural materials. The most useful compounds of aluminium ..., aluminium salts are not known to be used by any form of life. In keeping with its pervasiveness, aluminium is well tolerated by plants and animals. ref name Ullmann Due to their prevalence, potential beneficial or otherwise biological roles of aluminium compounds are of continuing interest. Characteristics File Aluminium bar surface etched.jpg thumb left Etched surface from a high purity 99.9998 aluminium bar, size 55 37 mm Physical Aluminium is a relatively soft, durable, lightweight ... on the surface roughness. It is nonmagnetic and does not easily ignite. A fresh film of aluminium film ... of medium and far infrared radiation. The yield engineering yield strength of pure aluminium is 7 11 Pascal unit MPa , while aluminium alloy s have yield strengths ranging from 200 MPa to 600 MPa ... Metals edition 3rd page publisher Butterworth Heinemann isbn 9780340632079 ref Aluminium has ... , casting metalworking cast , drawing metalworking drawn and extrusion extruded . Aluminium atoms are arranged in a cubic crystal system face centered cubic fcc structure. Aluminium has a stacking ... title Mechanical Metallurgy publisher McGraw Hill isbn 0070168938 ref Aluminium is a good Heat conduction ... more details
Related OtherAnions Gallium phosphide br Galliumarsenide br Gallium antimonide OtherCations Boron nitride br Aluminium nitride br Indium nitride Function OtherFunctn OtherCpds Aluminiumgalliumarsenide br Indium galliumarsenide br Galliumarsenide phosphide br Aluminiumgallium nitride br Indium gallium nitride Gallium nitride Gallium Nitrogen is a binary boron group III nitrogen group V ... hotter temperatures and work at much higher voltages than galliumarsenide GaAs transistors, they make ... s . The mixture of GaN with indium In indium gallium nitride InGaN or Aluminium Al Aluminiumgallium ...chembox Watchedfields changed verifiedrevid 450764160 Name Gallium nitride ImageFile GaNcrystal.jpg ImageFile2 Wurtzite polyhedra.png IUPACName Gallium nitride OtherNames Name Section1 Chembox Identifiers ..., Christian. Investigation of the Thermal Properties of Gallium Nitride Using the Three Omega Technique ... have shown stability in radiation environments. ref cite web title Enhancement Mode Gallium Nitride ... journal Jpn. J. Appl. Phys. volume 40 year 2001 page L195 L197 doi 10.1143 JJAP.40.L195 ref Gallium ... is maintained up to higher temperatures than silicon transistors. The first gallium nitride ... actively developed. In 2010 the first enhancement mode gallium nitride transistors ... title Single crystal gallium nitride nanotubes volume 422 pmid 12686996 last2 He first2 R last3 .... ref http www.spacewar.com reports Gallium Nitride Based Modules Set New 180 Day Standard For High Power Operation 999.html Gallium Nitride Based Modules Set New 180 Day Standard For High Power ... Research Finds Gallium Nitride is Non Toxic, Biocompatible Holds Promise For Biomedical ... to skin, eyes and lungs. The environment, health and safety aspects of gallium nitride sources ... beam epitaxy Epitaxy References reflist 2 External links http physchem.ox.ac.uk MSDS GA gallium ... Roadmap page at ONR Gallium compounds DEFAULTSORT Gallium Nitride Category Nitrides Category ... more details
Zinc arsenide Zn sub 3 sub As sub 2 sub is a binary compound of zinc with arsenic which forms gray tetragonal crystals. Zinc compounds Category Zinc compounds Category Arsenides inorganic compound stub simple Zinc arsenide ... more details
Indium arsenide antimonide phosphide Indium Arsenic Antimony Phosphorus is a semiconductor material . InAsSbP has been widely used as blocking layers for semiconductor laser structures ref Calculation of spatial intensity distribution of InAsSb InAsSbP laser diode emission, L. I. Burov, A. S. Gorbatsevich, A. G. Ryabtsev, G. I. Ryabtsev, A. N. Imenkov and Yu. P. Yakovlev, Journal of Applied Spectroscopy, vol. 75 num. 6 805 809 doi 10.1007 s10812 009 9128 8 ref , as well as for the mid infrared light emitting diode s Citation needed date February 2011 , photodetectors and thermophotovoltaic Indium Phosphide Arsenide Antimonide thermophotovoltaic cells . InAsSbP layers can be grown by heteroepitaxy on indium arsenide , gallium antimonide and other materials. The vibrational properties of the alloy has been investigated by Raman spectroscopy ref Raman scattering in InAs sub x sub Sb sub y sub P sub 1 x y sub alloys grown by gas source MBE, K. J. Cheetham, A. Krier, I. I. Patel, F. L. Martin, J S. Tzeng, C J. Wu and H H. Lin, J. of Phys. D Appl. Phys. vol. 44 num. 8 doi 10.1088 0022 3727 44 8 085405 ref . See also Aluminiumgallium indium phosphide Indium galliumarsenide phosphide Gallium indium arsenide antimonide phosphide References references External links Category Semiconductor materials Category Indium compounds Category Arsenic compounds Category Antimony compounds Category Phosphides Category III V compounds Condensedmatter stub ... more details
An arsenide mineral is a mineral that contains arsenide as its main anion . Arsenides are grouped with the sulfide mineral sulfides in both the Dana and Strunz mineral classification systems. ref http webmineral.com dana II 2.shtml 2.1 Webmineral Dana ref ref http webmineral.com strunz II.shtml Webmineral Strunz ref Examples algodonite Cu sub 6 sub As domeykite Cu sub 3 sub As l llingite FeAs sub 2 sub nickeline NiAs rammelsbergite NiAs sub 2 sub safflorite Co,Fe As sub 2 sub skutterudite Co,Ni As sub 3 sub sperrylite PtAs sub 2 sub References Reflist Category Arsenide minerals mineral stub fr Ars niure min ral ja uk ... more details
name Mass Spectrometric Study Of The Nonstoichiometric Vaporization Of Cadmium Arsenide J. B.Westmore ... cadmium arsenide undergoes several phase transitions at high temperatures, making phases labeled stable ... arsenide has a lower vapor pressure 0.8 atm than both cadmium and arsenic separately. Cadmium arsenide ... Cadmium Arsenide is a II V semiconductor showing degenerate N type semiconductor intrinsic conductivity ... sub , is less than 0. When deposited by thermal evaporation deposition , cadmium arsenide displayed ... Resistivity Measurements On Evaporated Thin Films Of Cadmium Arsenide, Cd sub 3 sub As sub 2 sub ... ref . Preparation Cadmium arsenide can be prepared as amorphous semiconductive glass . According ... r60n45272058k220 ref , the preparation of cadmium arsenide was made from cadmium metal, which ... of cd3as2 jNV2f7W15J ref . Nernst Effect Cadmium arsenide is used in infrared detector s using ...?arNumber 781173 Cadmium arsenide can be used as a dopant for HgCdTe . References references External ... more details
OtherAnions Gallium III fluoride br Gallium III bromide br Gallium III iodide OtherCations Aluminium chloride br Indium III chloride br Thallium III chloride Gallium trichloride is the chemical compound with the formula GaCl sub 3 sub . Solid gallium trichloride exists as a dimer with the formula ... sub 3 sub is milder than aluminium trichloride . Gallium III is easier to reduce than Al III , so the chemistry of reduced gallium compounds is more extensive than for aluminium. Ga sub 2 sub Cl sub ... atoms with the gallium atoms essentially tetrahedrally coordinated by chlorine is surprising, as the chlorides of the two members of group 13 above and below gallium, aluminium trichloride AlCl sub 3 ... structure. As a consequence of its structure where there are no significant lattice forces, gallium trichloride has the lowest melting point of all of the aluminium, gallium and indium trihalides. The formula ...chembox Watchedfields changed verifiedrevid 470455131 ImageFile Gallium trichloride from xtal 2004 3D balls.png ImageSize IUPACName OtherNames Gallium III chloride, Trichlorogallium, Trichlorogallane Section1 ... for a metal halide. It is the main precursor to most derivatives of gallium and a reagent in organic synthesis . ref Yamaguchi, M. Shibasaki, M. Gallium Trichloride in Encyclopedia of Reagents for Organic ... of Ga III and Fe III are similar, and gallium III compounds have been used as diamagnetic analogues of ferric compounds. Preparation Gallium trichloride can be prepared from the elements, heating gallium ... Wallwork I.J.Worral J.Chem. Soc 1965,1816 ref ref Kovar, R. A. Gallium Trichloride Inorganic Syntheses ... also be prepared from the gallium oxide by heating with thionyl chloride ref H.Hecht, G.Jander ... . In the gas phase the dimers dissociate to trigonal planar monomers. Complexes Gallium is the lightest member of Group 13 to have a full d shell, gallium has the electronic configuration Argon Ar 3 ... of the bonds between gallium halides and ligands have been extensively studied. What emerges ... more details
Encyclopedia
top
