Ionbox Section1 Chembox Identifiers ChemSpiderID 10605727 ChemSpiderID Ref chemspidercite correct chemspider SMILES As 3 StdInChI 1S As q 3 StdInChI Ref stdinchicite correct chemspider StdInChIKey PVBJMPGOALGYQS UHFFFAOYSA N StdInChIKey Ref stdinchicite correct chemspider Section2 Chembox Properties Formula Chem As 3 MolarMass 74.9216 g mol sup 1 sup ExactMass 74.921596417 g mol sup 1 sup Section3 Chembox Related OtherAnions Bismuthide Arsenide is an arsenic anion with the charge &minus 3. The trianion is formed by the reduction of arsenic by three electrons. For example heating arsenic powder with excess sodium gives sodium arsenide Na sub 3 sub As . The anions have no existence in solution since they are extremely basic. These solid salts have very high lattice energy lattice energies . An arsenide compound is a compound with arsenic in oxidation state &minus 3, but the term is used loosely. The mineral sperrylite PtAs sub 2 sub is called a platinum arsenide , but the formal oxidation state for arsenic is &minus 2. because the solid is usually described as Pt sup 4 sup ,As sub 2 sub sup 4 sup . The description of gallium arsenide GaAs is more straightforward since it features isolated arsenic centers. Arsenides are toxic because of the inherent toxicity of arsenic and all of its compounds. Metal arsenides react with acids to form highly toxic arsine gas. See Category Arsenides category for a list. See also Arsenide mineral External links Category Anions Category Arsenides Inorganic compound stub ar de Arsenide es Arseniuro fr Ars niure nl Arsenide ja pt Arsenieto uk vi Asenua zh simple Arsenide ... more details
Zinc arsenide Zn sub 3 sub As sub 2 sub is a binary compound of zinc with arsenic which forms gray tetragonal crystals. Zinc compounds Category Zinc compounds Category Arsenides inorganic compound stub simple Zinc arsenide ... more details
OtherCations Gallium arsenide OtherFunctn Function OtherCpds Indium arsenide , InAs , or indium monoarsenide ... SVA NSM Semicond InAs thermal.html title Thermal properties of Indium Arsenide InAs accessdate 2011 11 22 ref Indium arsenide is used for construction of infrared detector s, for the wavelength ... temperature as well. Indium arsenide is also used for making of diode laser s. Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Indium arsenide is sometimes used together with indium phosphide . Alloyed with gallium arsenide it forms indium gallium arsenide a material ... dember emitter. Quantum dot s can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constant s of the materials create tensions in the surface ... archivedate 2006 10 18 ref Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix. References Refimprove date May 2009 reflist ... more details
An arsenide mineral is a mineral that contains arsenide as its main anion . Arsenides are grouped with the sulfide mineral sulfides in both the Dana and Strunz mineral classification systems. ref http webmineral.com dana II 2.shtml 2.1 Webmineral Dana ref ref http webmineral.com strunz II.shtml Webmineral Strunz ref Examples algodonite Cu sub 6 sub As domeykite Cu sub 3 sub As l llingite FeAs sub 2 sub nickeline NiAs rammelsbergite NiAs sub 2 sub safflorite Co,Fe As sub 2 sub skutterudite Co,Ni As sub 3 sub sperrylite PtAs sub 2 sub References Reflist Category Arsenide minerals mineral stub fr Ars niure min ral ja uk ... more details
chembox verifiedrevid 444428416 Name Aluminium arsenide ImageFile Boron phosphide unit cell 1963 CM 3D ... OtherAnions OtherCations OtherFunctn Aluminium gallium arsenide , Aluminium indium arsenide , Aluminium antimonide , Boron arsenide Function semiconductor materials OtherCpds Aluminium arsenide or aluminum arsenide Aluminium arsenic is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide. Aluminium arsenic can form a superlattice with gallium arsenide gallium arsenic which results in its semiconductor ... Arsenide Clusters. Journal of Nanoparticle Research. Vol. 13 Issue 5 pg. 2029 2039. 2011. ref Because ... 0.17x 10 sup 22 sup ref name multiple Dierks, S.. Aluminum Arsenide MATERIAL SAFETY DATA. The Fitzgerald ... modulus 7.55 0.26x 10 sup 11 sup dyn cm sup 2 sup ref name multiple Dierks, S.. Aluminum Arsenide MATERIAL ... . ref Hardness on the Mohs scale 5 ref name multiple Dierks, S.. Aluminum Arsenide ... aluminumarsenide.pdf . ref Insolubility in H sub 2 sub O ref name multiple Dierks, S.. Aluminum Arsenide ... aluminumarsenide.pdf . ref Uses Aluminum arsenide is a III V compound semiconductor material and is an advantageous ... diodes . ref Minden, H. T. Some Optical Properties of Aluminum Arsenide. Applied Physics Letters. Vol. 17, Issue 9. pg. 358 360. 1970. ref Similar compounds such as gallium arsenide , gallium phosphide ... arsenide has been limited. The limitations in the application of aluminum arsenide are caused by difficulties ... . U.S. Patent No. 4002505. Washington, DC U.S. Patent and Trademark Office. ref Aluminum arsenide ... or melt growth techniques. However, aluminum arsenide crystals prepared by these methods are generally ... Patent No. 4002505. Washington, DC U.S. Patent and Trademark Office. ref Aluminum arsenide has also ... reported on the preparation of aluminum arsenide, mainly because of the practical difficulties involved ... York, 1962 . ref Reactivity Aluminum arsenide is a stable compound however acid, acid fumes and moisture ... more details
chembox verifiedrevid 428779018 Name Boron Arsenide ImageFile Boron arsenide unit cell 1963 CM 3D balls.png ImageSize 200px ImageName BAs ImageFile B12As2 3D side view.jpg ImageSize 200px ImageName B sub 12 sub As sub 2 sub Section1 Chembox Identifiers CASNo Ref cascite correct ?? CASNo 12005 69 5 Section2 Chembox Properties Formula BAs or B sub 12 sub As sub 2 sub MolarMass 85.733 g mol Appearance Density 5.22 g cm sup 3 sup , solid Solubility Insoluble MeltingPtC 2027 BoilingPtC BandGap 1.50 eV BAs 3.47 eV B sub 12 sub As sub 2 sub Section4 Chembox Thermochemistry DeltaHf Entropy Section7 Chembox Hazards EUClass N A RPhrases SPhrases Section8 Chembox Related OtherAnions Boron nitride br Boron phosphide br Boron antimonide OtherCations Aluminium arsenide br Gallium arsenide br Indium arsenide Boron arsenide is a chemical compound of boron and arsenic . It is a cubic sphalerite semiconductor with a lattice constant of 0.4777 nm and an indirect bandgap of roughly 1.5 eV. It can be alloyed with gallium arsenide . Boron arsenide also occurs as an icosahedral boride, B sub 12 sub As sub 2 sub . ref cite web url http spectra.phy.bris.ac.uk research semiconductor.asp title Semiconductor Research publisher University Bristol, Applied Spectroscopy Group ref It belongs to R 3m space group with a rhombohedral structure based on clusters of boron atoms and two atom As As chains. It s a wide bandgap semiconductor 3.47 eV with the extraordinary ability to self heal radiation damage. This form can be grown on substrates such as silicon carbide . Applications Solar cell s can be fabricated from boron arsenide. It s also an attractive choice for devices exposed to radiation which can severely degrade the electrical properties of conventional semiconductors, causing devices to cease functioning. Among the particularly intriguing possible applications for B sub 12 sub As sub 2 sub ... P. D. authorlink coauthors year 1975 month title Ordered Boron Arsenide journal Journal of the American ... more details
Chembox Verifiedfields changed verifiedrevid 476995185 ImageFile1 Gallium arsenide unit cell 3D balls.png ImageFile Ref chemboximage correct ?? ImageSize 244 ImageFile2 Gallium arsenide crystal.jpg ImageFile1 Ref chemboximage correct ?? ImageSize1 244 ImageName1 Samples of gallium arsenide PIN Gallium arsenide Section1 Chembox Identifiers CASNo 1303 00 0 CASNo Ref cascite correct CAS PubChem 14770 ... EINECS 215 114 8 UNNumber 1557 MeSHName gallium arsenide RTECS LW8800000 SMILES Ga As StdInChI ... SPhrases S1 2 , S20 21 , S28 , S45 , S60 , S61 NFPA F 1 NFPA H 3 NFPA R 2 NFPA O W Gallium arsenide ... a 3 oxidation state . Gallium arsenide can be prepared by direct reaction from the elements, as used ... Arsenide publisher IEEE Inspec year 1996 isbn 0 85296 885 X ref and the same strategy has been described ... with a hydroxamic acid HA , for example ref Oxidative dissolution of gallium arsenide and separation ... GaAs advantages Some electronic properties of gallium arsenide are superior to those of silicon . It has ... gallium arsenide transistors to function at frequencies in excess of 250 GHz. Unlike silicon ... arsenide in combination with aluminium arsenide AlAs or the alloy Aluminium gallium arsenide Al .... File MidSTAR 1.jpg thumb upright High efficiency, triple junction gallium arsenide solar cells covering ... of GaAs is for high efficiency solar cell s. Gallium arsenide GaAs is also known as single crystalline ... crystal s of gallium arsenide can be manufactured by the Bridgeman technique , as the Czochralski .... Safety The toxicological properties of gallium arsenide have not been thoroughly investigated ..., health and safety aspects of gallium arsenide sources such as trimethylgallium and arsine ... 2004JCrGr.272..816S ref California lists gallium arsenide as a carcinogen. ref Cite web title Chemicals ... Toxicity gallium arsenide, hexafluoroacetone, nitrous oxide and vinyl cyclohexene dioxide date 2008 ... colbegin 3 Aluminium arsenide Aluminium gallium arsenide Arsine Cadmium telluride Gallium antimonide ... more details
name Mass Spectrometric Study Of The Nonstoichiometric Vaporization Of Cadmium Arsenide J. B.Westmore ... cadmium arsenide undergoes several phase transitions at high temperatures, making phases labeled stable ... arsenide has a lower vapor pressure 0.8 atm than both cadmium and arsenic separately. Cadmium arsenide ... Cadmium Arsenide is a II V semiconductor showing degenerate N type semiconductor intrinsic conductivity ... sub , is less than 0. When deposited by thermal evaporation deposition , cadmium arsenide displayed ... Resistivity Measurements On Evaporated Thin Films Of Cadmium Arsenide, Cd sub 3 sub As sub 2 sub ... ref . Preparation Cadmium arsenide can be prepared as amorphous semiconductive glass . According ... r60n45272058k220 ref , the preparation of cadmium arsenide was made from cadmium metal, which ... of cd3as2 jNV2f7W15J ref . Nernst Effect Cadmium arsenide is used in infrared detector s using ...?arNumber 781173 Cadmium arsenide can be used as a dopant for HgCdTe . References references External ... more details
Gallium arsenide phosphide Gallium Arsenic sub 1 x sub Phosphorus sub x sub is a semiconductor material , an alloy of gallium arsenide and gallium phosphide . It exists in various composition ratios indicated in its formula by the fraction x . Gallium arsenide phosphide is used for manufacturing red, orange and yellow light emitting diode s. It is often grown on gallium phosphide substrates to form a GaP GaAsP heterostructure . In order to tune its electronic properties, it may be doping semiconductors doped with nitrogen GaAsP N ref Characteristics of Nitrogen Doped GaAsP Light Emitting Diodes, Tadashige Sato and Megumi Imai, Jpn. J. Appl. Phys. vol. 41 pp. 5995 5998 2002 doi 10.1143 JJAP.41.5995 ref . See also Gallium arsenide Gallium phosphide Indium gallium arsenide phosphide Indium gallium phosphide Aluminium gallium arsenide phosphide Gallium indium arsenide antimonide phosphide References references External links Category Semiconductor materials Category Gallium compounds Category Arsenides Category Phosphides Category III V compounds Category Light emitting diode materials condensedmatter stub fr Phospho ars niure de gallium pl Fosforo arsenek galu ... more details
Aluminium indium arsenide , also indium aluminium arsenide or AlInAs Aluminium Al sub x sub indium In sub 1 x sub arsenic As , is a semiconductor material with very nearly the same lattice constant as Gallium indium arsenide GaInAs , but a larger bandgap . The x in the formula above is a number between 0 and 1 this indicates an arbitrary alloy between indium arsenide InAs and Aluminium arsenide AlAs . The formula AlInAs should be considered an abbreviated form of the above, rather than any particular ratio. Aluminium indium arsenide is used e.g. as a buffer layer in HEMT metamorphic HEMT transistors, where it serves to adjust the lattice constant differences between the GaAs substrate and the GaInAs channel. It can be also used to form alternate layers with indium gallium arsenide , which act as quantum well s these strcuctures are used in e.g. broadband quantum cascade laser s. Safety and toxicity aspects The toxicology of AlInAs has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium arsenide sources such as trimethylindium and arsine and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review ref Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors D V Shenai Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1 4, pp. 816 821 2004 doi 10.1016 j.jcrysgro.2004.09.007 ref . References references External links DEFAULTSORT Aluminium Indium Arsenide Category Semiconductor materials Category III V compounds Category Arsenides Category Aluminium compounds Category Indium compounds ar ... more details
chembox verifiedrevid 414436696 Name Yttrium III arsenide Reference ref name hand Citation last Lide first David R. year 1998 title Handbook of Chemistry and Physics edition 87 publication place Boca Raton, FL publisher CRC Press isbn 0 8493 0594 2 pages 4 94 ref ImageFile NaCl polyhedra.png IUPACName Yttrium III arsenide OtherNames Yttrium arsenide Section1 Chembox Identifiers CASNo 12255 48 0 Section2 Chembox Properties Formula YAs MolarMass 163.828 g mol Appearance cubic crystal system cubic crystals Density 5.59 g cm sup 3 sup MeltingPt BoilingPt Section3 Chembox Structure CrystalStruct Cubic crystal system cubic , Pearson symbol cF8 SpaceGroup Fm u style text decoration overline 3 u m, No. 225 Section7 Chembox Hazards EUClass not listed Yttrium III arsenide Yttrium Y Arsenic As is an inorganic chemical compound . References Refimprove date May 2009 reflist Yttrium compounds Category Arsenides Category Yttrium compounds inorganic compound stub ar fa III nl Yttrium III arsenide ... more details
File Sphalerite unit cell depth fade 3D balls.png thumb The crystal structure of aluminium gallium arsenide is Zincblende crystal structure zincblende . Aluminium gallium arsenide also aluminum gallium arsenide Aluminium Al sub x sub gallium Ga sub 1 x sub arsenic As is a semiconductor material with very nearly the same lattice constant as Gallium arsenide GaAs , but a larger bandgap . The x in the formula above is a number between 0 and 1 this indicates an arbitrary alloy between Gallium arsenide GaAs and Aluminium arsenide AlAs . The bandgap varies between 1.42 electron volt eV GaAs and 2.16 eV AlAs . For x 0.4, the direct bandgap bandgap is direct . The formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio. Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector QWIP . It can also be used in 1064 nm Infra red laser diode s. Safety and toxicity aspects The toxicology of AlGaAs has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium arsenide sources such as trimethylgallium and arsine and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review. ref cite journal author Shenai Khatkhate, D. V. Goyette, R. J. DiCarlo, R. L. Jr. Dripps, G. journal Journal of Crystal Growth year 2004 volume 272 issue 1 4 pages 816 821 doi 10.1016 j.jcrysgro.2004.09.007 title Environment, Health and Safety Issues for Sources Used in MOVPE Growth of Compound Semiconductors ref References reflist External links cite web url http www.ioffe.ru SVA NSM Semicond AlGaAs index.html work Ioffe Database title Al sub x sub Ga sub 1 x sub As publisher FTI im. A. F. Ioffe, RAN location Sankt Peterburg DEFAULTSORT Aluminium Gallium Arsenide ... more details
Indium arsenide antimonide phosphide Indium Arsenic Antimony Phosphorus is a semiconductor material . InAsSbP has been widely used as blocking layers for semiconductor laser structures ref Calculation of spatial intensity distribution of InAsSb InAsSbP laser diode emission, L. I. Burov, A. S. Gorbatsevich, A. G. Ryabtsev, G. I. Ryabtsev, A. N. Imenkov and Yu. P. Yakovlev, Journal of Applied Spectroscopy, vol. 75 num. 6 805 809 doi 10.1007 s10812 009 9128 8 ref , as well as for the mid infrared light emitting diode s Citation needed date February 2011 , photodetectors and thermophotovoltaic Indium Phosphide Arsenide Antimonide thermophotovoltaic cells . InAsSbP layers can be grown by heteroepitaxy on indium arsenide , gallium antimonide and other materials. The vibrational properties of the alloy has been investigated by Raman spectroscopy ref Raman scattering in InAs sub x sub Sb sub y sub P sub 1 x y sub alloys grown by gas source MBE, K. J. Cheetham, A. Krier, I. I. Patel, F. L. Martin, J S. Tzeng, C J. Wu and H H. Lin, J. of Phys. D Appl. Phys. vol. 44 num. 8 doi 10.1088 0022 3727 44 8 085405 ref . See also Aluminium gallium indium phosphide Indium gallium arsenide phosphide Gallium indium arsenide antimonide phosphide References references External links Category Semiconductor materials Category Indium compounds Category Arsenic compounds Category Antimony compounds Category Phosphides Category III V compounds Condensedmatter stub ... more details
Indium gallium arsenide InGaAs is a semiconductor composed of indium , gallium and arsenic . It is used in high power and high frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide . InGaAs bandgap also makes it the detector material of choice in optical fiber communication at 1300 and 1550 nanometer nm . Gallium indium arsenide GaInAs is an alternative name for InGaAs. Indium gallium arsenide was synthesized by T.P. Pearsall in 1976, who was the first to realize that single crystal indium gallium arsenide could be grown epitaxially on InP. Pearsall is credited with the determination of the band gap, the effective masses of electrons and holes, electron and hole mobilities and other fundamental properties of indium gallium arsenide. In 1978, Pearsall demonstrated the first high performance p i n detector, and two years later the uni traveling carrier utc photodiode. Both devices are currently widely used in optical fibre telecommunications. The indium content determines the two dimensional charge carrier density. Properties Image InGaAs Energy band composition.PNG right thumb 500px Energy gap versus gallium composition for InGaAs The optical and mechanical properties of InGaAs can be varied by changing the ratio of In and Ga, In sub x sub Ga sub 1 x sub As. ref http www.sensorsinc.com GaAs.html Technology What is InGaAs? ref The InGaAs device is normally grown on an indium phosphide InP substrate. In order to match the lattice constant of InP and avoid mechanical strain, In sub 0.53 sub Ga sub 0.47 sub As, this composition has a cut off wavelength of 1.68 m . By increasing the ratio of In further ... and lungs. The environment, health and safety aspects of indium gallium arsenide sources such as trimethylgallium ... gallium zinc oxide gallium arsenide indium arsenide References Reflist External links http www.ioffe.rssi.ru ..., Russia DEFAULTSORT Indium Gallium Arsenide Category Indium compounds Category Gallium compounds Category ... more details
Orphan date March 2011 The 122 iron arsenide unconventional superconductors are part of a new class of iron based superconductor s. They form in the tetragonal I4 mmm, ThCr sub 2 sub Si sub 2 sub type, crystal structure. The shorthand name 122 comes from their stoichiometry the 122s have the chemical formula XFe sub 2 sub As sub 2 sub , where X Ca, Ba, Sr or Eu. ref name Krey cite journal title Pressure induced volume collapsed tetragonal phase of CaFe sub 2 sub As sub 2 sub as seen via neutron scattering author A. Kreyssig et al. journal Physical Review B volume 78 pages 184517 year 2008 doi 10.1103 PhysRevB.78.184517 issue 18 ref ref name Tegel cite journal title Structural and magnetic phase transitions in the ternary iron arsenides SrFe2As2 and EuFe2As2 author Marcus Tegel, Marianne Rotter, Veronika Wei , Falko M. Schappacher, Rainer P ttgen, and Dirk Johrendt journal Journal of Physics Condensed Matter volume 20 pages 452201 year 2008 doi 10.1088 0953 8984 20 45 452201 issue 45 ref These materials become superconducting under pressure and also upon doping. ref Shirage, Parasharam Maruti 2008 . Superconductivity at 26 K in Ca1 xNax Fe2As2 . Applied Physics Express 1 081702. doi 10.1143 APEX.1.081702. ref ref name Park cite journal title Pressure induced superconductivity in CaFe ... sub As sub 2 sub . ref name Rotter2008 cite journal title Superconductivity at 38 K in the Iron Arsenide ... The 122s contain the same iron arsenide planes as the oxypnictides, but are much easier to synthesize ... sup sup . ref name Rotter2008 The second doping method is to directly dope the iron arsenide layer ... x sub Co sub x sub As sub 2 sub by Internal Doping of the Iron Arsenide Layers author A. Leithe Jasper ... cite journal title Magnetic and structural transitions in layered iron arsenide systems ... journal title Spin density wave anomaly at 140 K in the ternary iron arsenide BaFe2As2 author Marianne ... tin, ref name Canfield2009 while the second uses the binary metallic compound FeAs iron arsenide ... more details
Gallium manganese arsenide is a magnetic semiconductor . It is based on the world s second favorite semiconductor , GaAs , and as such is readily compatible with existing semiconductor technologies. Differently from other Magnetic semiconductor dilute magnetic semiconductors DMSs , such as the majority of those based on II VI semiconductors , it is not Paramagnetism paramagnetic . ref name furdyna diluted 1988 Cite journal volume 64 issue 4 pages R29 R64 last Furdyna first J. K. title Diluted magnetic semiconductors journal Journal of Applied Physics year 1988 url http link.aip.org link ?JAP 64 R29 1 doi 10.1063 1.341700 bibcode 1988JAP....64...29F ref but Ferromagnetism ferromagnetic , and hence exhibits hysteretic magnetization behavior. This memory effect is of importance for the creation of persistent devices. In Ga,Mn As, the manganese atoms provide a magnetic moment, and each also acts as an Acceptor semiconductors acceptor , making it a p type material. The presence of Charge carrier carriers allows the material to be used for Spin polarization spin polarized currents. In contrast, many other Ferromagnetism ferromagnetic Magnetic semiconductor DMSs are strongly insulating ref name ohno magnetotransport 1992 Cite journal doi 10.1103 PhysRevLett.68.2664 volume 68 issue 17 pages 2664 2667 last Ohno first H. coauthors H. Munekata, T. Penney, S. von Moln r, L. L. Chang title Magnetotransport properties of p type In,Mn As diluted magnetic III V semiconductors journal Physical Review Letters date 1992 04 27 url http link.aps.org abstract PRL v68 p2664 pmid 10045456 bibcode 1992PhRvL..68.2664O ref ref name pinto magnetic 2005 Cite journal volume 72 issue 16 pages 165203 last Pinto first N. coauthors L. Morresi, M. Ficcadenti, R. Murri, F. D Orazio, F. Lucari, L. Boarino, G. Amato title Magnetic and electronic transport percolation in epitaxial Ge sub 1 x sub Mn sub x sub .... E. C. Wood, Jr. Evans title Manganese incorporation behavior in molecular beam epitaxial gallium arsenide ... more details
Gallium indium arsenide antimonide phosphide Gallium Indium Arsenic Antimony Phosphorus or GaInPAsSb is a semiconductor material . Research has shown that GaInAsSbP can be used in the manufacture of mid infrared light emitting diode s ref Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes, A. Krier, V. M. Smirnov, P. J. Batty, V. I. Vasil ev, G. S. Gagis, and V. I. Kuchinskii, Appl. Phys. Lett. vol. 90 pp. 211115 2007 doi 10.1063 1.2741147 ref ref Lattice matched GaInPAsSb InAs structures for devices of infrared optoelectronics, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus , G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, Semiconductors vol. 36 num. 8 pp. 944 949 2002 doi 10.1134 1.1500478 ref and thermophotovoltaic cells ref Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic Diodes, K. J. Cheetham, P. J. Carrington, N. B. Cook and A. Krier, Solar Energy Materials and Solar Cells, vol. 95 pp. 534 537 2011 doi 10.1016 j.solmat.2010.08.036 ref . GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide , gallium antimonide and other materials. The exact composition can be tuned in order to make it Lattice constant lattice matched . The presence of five elements in the alloy allows extra degrees of freedom, making it possible to fix the lattice constant while varying the bandgap . See also Aluminium gallium phosphide Aluminium gallium indium phosphide Indium gallium arsenide phosphide Indium arsenide antimonide phosphide References references External links Category Semiconductor materials Category Gallium compounds Category Indium compounds Category Arsenic compounds Category Antimony compounds Category Phosphides Category III V compounds Condensedmatter stub ... more details
GPD may stand for General purpose datatypes Generalized Pareto distribution Generalized Parton Distributions GUID Partition Table Gallium arsenide Photodiode , a material for light meter s Gresham Police Department Gotham City Police Department Gotham Police Department GPD news agency in The Netherlands Glyceraldehyde phosphate dehydrogenase disambig ... more details
Speiss is a molten phase consisting primarily of iron arsenide that is commonly encountered in lead smelting operations. ref name samans Samans, Carl H. Engineering Metals and their Alloys , 1949 MacMillan ref References reflist Industry stub Category Metallurgical processes fr Speiss uk ... more details
NIAS may refer to National Institute of Advanced Studies India Nordic Institute of Asian Studies Netherlands Institute for Advanced Study Nias is an island off the western coast of Sumatra , Indonesia . Northern Ireland Ambulance Service NiAs may refer to Nickeline Nickel Arsenide NiAs a chemical compound of nickel and arsenic disambig ... more details
Unreferenced stub auto yes date December 2009 Narrow gap semiconductors are semiconducting materials with a band gap that is comparatively small compared to silicon . They are used as infrared detector s or thermoelectric s. List of Narrow gap semiconductors HgCdTe Lead II selenide PbSe Lead sulfide PbS Lead telluride PbTe Indium arsenide InAs InSb Cadmium arsenide Cd sub 3 sub As sub 2 sub Bismuth telluride Bi sub 2 sub Te sub 3 sub alpha tin element Sn incomplete DEFAULTSORT Narrow Gap Semiconductor Category Semiconductor material types Condensedmatter stub ... more details
Infobox mineral name Maucherite boxwidth boxbgcolor image Cubanite Maucherite Valleriite 199921.jpg imagesize alt caption Cubanite Maucherite Valleriite category Arsenide mineral formula Ni sub 11 sub As sub 8 sub strunz 02.AB.15 dana symmetry unit cell molweight color grey to reddish silver white colour habit system tetragonal twinning cleavage fracture tenacity mohs 4.5 5.5 luster streak grayish black diaphaneity gravity 6.9 7.3 density polish opticalprop refractive birefringence pleochroism 2V dispersion extinction length fast slow fluorescence absorption melt fusibility diagnostic solubility impurities alteration other prop1 prop1text references var1 var1text var2 var2text var3 var3text var4 var4text var5 var5text var6 var6text Maucherite is a grey to reddish silver white nickel arsenide mineral. It crystallizes in the tetragonal crystal system . It occurs in hydrothermal veins alongside other nickel arsenide and sulfide minerals. It is metallic and opaque with a Mohs hardness hardness of 5 and a specific gravity of 7.83. It is also known as placodine and Temiskamite. The unit cell is of symmetry group P4 sub 1 sub 2 sub 1 sub 2. It has the chemical formula Ni sub 11 sub As sub 8 sub and commonly contains copper, iron, cobalt, antimony, and sulfur as impurities. It was discovered in 1913 in Eisleben, Germany and was named after Wilhelm Maucher 1879 1930 , a Germany German mineral collector. References commons category Maucherite Reflist Refbegin http www.mindat.org min 2599.html Mindat localities Cite book first Walter last Schumann series BLV Bestimmungsbuch title Mineralien aus aller Welt edition 2 year 1991 isbn 3 405 14003 X pages 223 Refend Category Nickel minerals Category Arsenide minerals Category Tetragonal minerals mineral stub de Maucherit es Maucherita it Maucherite pl Maucheryt uk ... more details
Expert subject chemistry date November 2008 A compound semiconductor is a semiconductor Chemical compound compound composed of chemical element elements from two or more different groups of the periodic table ref http www.onr.navy.mil sci tech 31 312 ncsr glossary.asp C ref . These semiconductors typically form in Group periodic table groups 13 16 old groups III VI , for example of elements from Boron group group 13 old group III, Boron , Aluminium , Gallium , Indium and from Nitrogen group group 15 old group V, Nitrogen , Phosphorus , Arsenic , Antimony , Bismuth . The range of possible formulae is quite broad because these elements can form binary two elements, e.g. Gallium III arsenide GaAs , ternary three elements, e.g. Indium gallium arsenide InGaAs and quaternary four elements, e.g. Aluminium gallium indium phosphide AlInGaP alloys. Examples Gallium nitride Gallium III arsenide Indium arsenide Zinc selenide Zinc sulfide Silicon Carbide Indium III selenide For compound families and other examples see list of semiconductor materials . Fabrication Metalorganic vapour phase epitaxy MOVPE is the most popular deposition technology for the formation of compound semiconducting thin films for devices Citation needed date September 2009 . It uses ultrapure metalorganics and or hydride s as precursor chemistry precursor source materials in an ambient gas such as hydrogen . Other techniques of choice include Molecular beam epitaxy MBE Hydride vapour phase epitaxy HVPE Liquid phase epitaxy LPE Metal organic molecular beam epitaxy MOMBE Atomic layer deposition ALD Resources An interesting online resource for compound semiconductors and their fabrication, Britney s Guide to Semiconductor Physics ref http britneyspears.ac lasers.htm ref , is also available as reference material for semiconductor scientists and non scientists. References references Category Semiconductor material types Category Compound semiconductors fa ja ... more details
Oregonite , nickel Ni sub 2 sub iron Fe arsenic As sub 2 sub is a nickel iron arsenide mineral first described from Josephine Creek, Oregon , USA . Oregonite crystallises in the hexagonal crystal system and has a Mohs hardness of 5. Occurrence Oregonite is known, apart from its type locality, from the Chirnaisky Massif, Russian Federation Russia , associated with hydrothermal nickel minerals millerite , heazelwoodite in a metamorphosed ultramafic from the Skouriatissa mine, Cyprus , associated with Volcanogenic massive sulfide ore deposit VMS mineralisation and from the Kidd Mine , Timmins, Ontario , Canada within serpentinite hosted chromite deposits. References http www.mindat.org min 3015.html Oregonite on Mindat.org mineral stub Category Nickel minerals Category Iron minerals Category Arsenide minerals de Oregonit it Oregonite nl Oregoniet uk ... more details
A quantum well infrared photodetector QWIP , is an infrared photodetector made from semiconductor materials which contain one or more quantum well s. These can be integrated together with electronics and optics to make infrared camera s for thermography . A very common well material is gallium arsenide , used with barrier material aluminium gallium arsenide . There are several companies world wide manufacturing infrared systems which use QWIPs. It is also considered a game changing technology for such applications as air to air missiles, where it can detect objects which are well outside the visual range of the pilot. External links http qwip.jpl.nasa.gov NASA qwip research http www.armyscienceconference.com manuscripts N NO 001.pdf Corrogated QWIP for megapixel sensors Twenty Seventh Army Science Conference Category Optical devices Category Image sensors Category Infrared imaging optics stub de Quantentopf Infrarot Photodetektor fr QWIP ... more details
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