wiktionary Etch may refer to Etch protocol an open source, cross platform, multi language framework for building network services released by Cisco Systems into the Apache Software Foundation Etch Toy Story Etch , a character from the film Toy Story , based on the Etch A Sketch Etch, the codename for Debian GNU Linux 4.0 itself named after the Toy Story character See also Etching disambiguation disambig bar Etch de Etch ... more details
Etch is an open source , cross platform framework for building network services, first announced ref name announce cio http www.cio.com article 365513 Cisco Systems New Client Server Messaging Protocol Announced , CIO Magazine , May 22, 2008 ref in May 2008 by Cisco Systems . Etch encompasses a service description language, a compiler, and a number of language bindings. It is intended to supplement SOAP and CORBA as methods of communicating between networked pieces of software, especially where there is an emphasis on portability, transport independence, small size, and high performance. Etch is designed to be easily incorporated into existing applications and systems, enabling a natural and easy transition to a service oriented architecture . It originally was derived from work on the http developer.cisco.com web cuae home Cisco Unified Application Environment , the product acquired by Cisco as part of the Metreos acquisition. Implementations The initial release will support Java programming language Java and C Sharp programming language C . A second wave of support will include Ruby programming language Ruby , Python programming language Python , Javascript , and C programming language C . Open sourcing and licensing In July 2008, Etch was released under the Apache 2.0 license. ref name license http developer.cisco.com web cuae etch What is Etch? ref As part of the open source process, Etch was submitted to the Apache Incubator to be accepted as a new podling ref name apache proposal http wiki.apache.org incubator EtchProposal Proposal to accept Etch into the Apache Incubator ... search ?q etch 20vote 20apache 20incubator query etch 20vote 20apache 20incubator page 1 mid 6fusg5jtsqbcgpr7 state results Apache Incubator vote thread ref and was eventually passed. Etch is now ... cwiki.apache.org ETCH http www.cisco.com en US netsol ns738 networking solutions package.html Cisco ... protocols fr Etch protocole de Etch Protokoll ... more details
Infobox Toy name Etch A Sketch image Image EtchASketch10 23 2004.jpg 200px type Drawing toy inventor ... a sketch.com slogan Etch A Sketch is a registered trademark for a mechanical drawing toy manufactured by the Ohio Art Company . An Etch A Sketch is a thick, flat gray screen in a plastic frame ... moves it vertically. The Etch A Sketch was introduced near the peak of the post World War II baby boom ... named Etch A Sketch to its Century of Toys List, a roll call commemorating the 100 most memorable ... Inside Shown.jpg thumb Etch A Sketch with inside shown The toy can be considered a simplified version ... . History Please see discussion for changes that need to be made in this section The Etch A Sketch ... news picturegalleries howaboutthat 7885062 Etch A Sketch turns 50 amazing art created with the drawing toy.html accessdate 13 July 2010 newspaper Telegraph date July 12, 2010 location London title Etch ... Icon of childhood is 50 Etch A Sketch has carved a spot of honor in pop culture url http www.tradingmarkets.com news stock alert oart icon of childhood is 50 etch a sketch has carved a spot of honor .... The L Ecran Magique was soon renamed the Etch A Sketch and became the most popular drawing toy ... States in time for the 1960 holiday season with the name Etch A Sketch . Ohio Art supported ... Bot generated title ref Etch a Sketch was manufactured in Bryan, Ohio until the company moved the manufacturing ... Kahn date December 7, 2003 ref Later versions Etch A Sketch Animator Image Etch A Sketch Animator.jpg 150px right thumb The Etch A Sketch Animator The Etch A Sketch Animator, which debuted in 1986, ref ..., like a regular Etch A Sketch, with several buttons to manipulate the drawings. It had a few kilobyte ... a speaker, which made static like sounds when the knobs were moved and during animations. Etch A Sketch Animator 2000 Unsourced image removed Image oaetch2000.jpg 150px right thumb The Etch A Sketch Animator 2000 The Etch A Sketch Animator 2000 was a portable toy developed by Ohio Art in 1987, debuting ... more details
orphan date August 2010 The Wright Etch is a preferential etch for revealing defects in 100 and 111 oriented, p and n type silicon . It was developed by Margaret Wright Jenkins in 1976 while working in research and development at Motorola Inc. It was published in 1977 ref Margaret Wright Jenkins, Journal of the Electrochemical Society 124 , 757 759, 1977 ref . This etchant reveals clearly defined oxidation induced stacking faults, dislocations, swirls and striations with minimum surface roughness or extraneous pitting. These defects are known causes of shorts and current leakage in finished semiconductor devices such as transistor s should they fall across isolated junctions. A relatively slow etch rate 1 micrometre per minute at room temperature provides etch control. The long shelf life of this etchant allows the solution to be stored in large quantities. The present report summarizes the highlights of the Wright etch. For a detailed discussion of observation and findings, please consult the original publication ref Margaret Wright Jenkins, Journal of the Electrochemical Society 124 , 757 759, 1977 ref . Etch formula The composition of the Wright etch is as follows 60 ml conc. HF ... the order of mixing is not critical. Etch mechanism The Wright etch consistently produces well defined etch figures of common defects on silicon surfaces. This attribute is attributed to the interactions ... , usually HF. This is a continuous process during the etch cycle. In order to delineate a crystal ... acid which prevents the formation of bubbles during etching. Summary This etch process is a quick ... that Wright etch is superior in revealing stacking faults and dislocation etch figures when compared ... see references for comparison micrographs. This etch is widely used in failure analysis of electrical ... t6 1 2.html . In these publications, by comparison, the Wright etch was the preferred etchant to reveal ... amat def en kap 6 advanced t6 1 2.html DEFAULTSORT Wright Etch Category Etching Category Etching microfabrication ... more details
Mergeto Industrial etching date January 2010 orphan date January 2010 Metallographic Etch Techniques Many Metallographic etches exist for examining the microstructure of steel and related materials. A few very common etchant s and use are listed here. Nital This is a common etch for revealing Grain boundary grain boundaries especially in carbon steel s. It is made through the mixture of Nitric acid Nitric Acid 70 reagent grade and an alcohol which may be ethanol , methanol , or mineral spirits . Methanol is seldom used due to its toxicity and the most common alcohol used is ethanol Note be cautious when mixing always add the acid to alcohol while stirring and never store concentrations of Nital greater than 5 as at 10 it is comparable to rocket fuel in its volatility chemistry volatility . This etchant is relatively simple to use, simply wash the polished specimen in the Nital for a few seconds then rinse with water and ethanol, dry and then the specimen is ready to be examined. For this etchant it is essential that the metal be polished with no imperfections to allow a proper etch. Macroetchants While there are many macroetchants around one technique very commonly used to reveal Dendrite metal dendritic patterns and Segregation in materials segregation impurities in steel is a hydrochloric acid solution. There are a few variations of this etch, but in the simplest form it is a mixture of approximately 38 HCl reagent grade with Distilled water distilled and deionized water at a ratio of 1 1 again, add the acid to the water . This mixture is heated to 70 to 80 degrees celsius and the specimen is immersed in the solution for anywhere between 10 minutes to over an hour depending on the desired result. After the desired time has passed the specimen is rinsed in cool water and desmutted with a vegetable brush and then rinsed in alcohol and dried. The rinse step of this etchant .... DEFAULTSORT Etch Techniques Category Metallurgy ... more details
Unreferenced stub date December 2009 The etch pit density EPD is a measure for the quality of semiconductor wafer s. An Wet etching etch solution is applied on the surface of the wafer where the etch rate is increased at dislocation s of the crystal resulting in wikt pit pits . For GaAs one uses typically molten Potassium hydroxide KOH at 450 degrees Celsius for about 40 minutes in a zirconium crucible . The density of the pits can be determined by Microscopy Light Microscopy the contrast issue optical contrast microscopy . Silicon wafers have usually a very low density of 100 cm sup 2 sup while semi insulating GaAs wafers have a density on the order of 10 sup 5 sup cm sup 2 sup . High purity Semiconductor detector Semiconductor particle detectors Germanium detectors require the Ge crystals to be grown with a controlled range of dislocation density to reduce impurities. The etch pitch density requirement is typically within the range 10 sup 3 sup to 10 sup 4 sup cm sup 2 sup . The etch pit density can be determined according to DIN 50454 1 and ASTM F 1404. DEFAULTSORT Etch Pit Density Category Semiconductors Measurement stub de Versetzungsdichte ko ... more details
Buffered oxide etch BOE , also known as buffered HF or BHF, is a wet Etching microfabrication etchant used in microfabrication . Its primary use is in etching thin film s of silicon dioxide SiO sub 2 sub or silicon nitride Si sub 3 sub N sub 4 sub . It is a mixture of a buffering agent , such as ammonium fluoride NH sub 4 sub F , and hydrofluoric acid HF . Concentrated HF typically 49 water etches silicon dioxide too quickly for good process control. Buffered oxide etch is commonly used for more controllable etching. ref name Wolf cite book title Silicon Processing for the VLSI Era Volume 1 Process Technology last Wolf first S. coauthors R.N. Tauber year 1986 pages 532 533 isbn 0 961672 3 7 ref Some oxides produce insoluble products in HF solutions. Thus, HCl is often added to BHF solutions in order to dissolve these insoluble products and produce a higher quality etch. ref name Iliescua2005 cite journal doi 10.1016 j.surfcoat.2004.10.094 year 2005 month Aug author Iliescua, Ciprian title Characterization of masking layers for deep wet etching of glass in an improved HF HCl solution volume 198 issue 1 3 pages 314 journal J. Surf. Coat. last2 Jing first2 J last3 Tay first3 F last4 Miao first4 J last5 Sun first5 T ref A common buffered oxide etch solution comprises a 6 1 volume ratio of 40 NH sub 4 sub F in water to 49 HF in water. This solution will etch thermally grown oxide at approximately 2 nanometres per second at 25 degrees Celsius. ref name Wolf References reflist Category Etching microfabrication fr Buffered oxide etch ... more details
Advanced Silicon Etch ASE is a deep reactive ion etching DRIE technique to rapidly etch deep and high aspect ratio structures in silicon. ASE was pioneered by Surface Technology Systems Plc. STS in 1994 in the UK. STS has continued to develop this process with even greater etch rates while maintaining side wall roughness and selectivity. STS developed the switched process originally invented by Dr. Larmer at Bosch, Stuttgart. ASE consists in combining the fast etch rates achieved in an isotropic Si etch usually making use of an SF sub 6 sub Plasma physics plasma with a deposition or passivation process usually utilising a Octafluorocyclobutane C4F8 plasma condensation process by alternating the two process steps. This approach achieves the fastest etch rates whilst maintaining the ability to etch Anisotropy anisotropically , typically vertically in Microelectromechanical Systems Microelectromechanical systems MEMS applications. blockquote The ASE HRM is an evolution of the previous generations of ICP design, now incorporating a decoupled plasma source patent pending . This decoupled source generates very high density plasma which is allowed to diffuse into a separate process chamber. Through careful chamber design, the excess ions that are detrimental to process control are reduced, leaving a uniform distribution of fluorine free radicals at a higher density than that available from the conventional ICP sources. The higher fluorine free radical density facilitates increased etch rates, typically over three times the etch rates achieved with the original Bosch process. Also, as a result of the reduction in the effect of localised depletion of these species, improved uniformity for many applications can be achieved. ref Hopkins et al. 2004 Developments in Si and SiO2 Etching for MEMS based Optical Applications 2004 ref blockquote References reflist Citation last Hopkins first J title Developments in Si and SiO2 Etching for MEMS based Optical Applications 2004 url http ... more details
Taxobox color violet name Tobacco etch virus TEV image image caption Tobacco etch virus on jimsonweed. virus group iv familia Potyviridae genus Potyvirus species Tobacco etch virus synonyms datura Z virus br tobacco severe etch virus br tomato etch virus Tobacco etch virus TEV is a plant pathogenic virus ref http www.doacs.state.fl.us pi enpp pathology florida viruses What 20is 20a 20virus aboutv.html About Plant Viruses ref in the genus Potyvirus and the virus family Potyviridae . Like other members of the Potyvirus genus, TEV is a monopartite strand of positive sense, single stranded RNA surrounded by a capsid made for a single viral encoded protein. The virus is a filamentous particle that measures about 730 nm in length. It is transmissible in a non persistent manner by more than 10 species of aphids including Myzus persicae . It also is easily transmitted by mechanical means but is not known to be transmitted by seeds. ref http www.dpvweb.net dpv showdpv.php?dpvno 258 ref Host Range This virus infects many species of Solanaceae . Agriculturally important crops that it infects include several species of Capsicum i.e. C. annuum , C. frutescens , tomato Lycopersicon esculentum , and tobacco Nicotiana spp. . It also infects many perennial weed species that can act as virus reservoirs for susceptible agricultural crops. These weed species include Solanum nigrum nightshade , S. aculeatissimum soda apple , Chenopodium album pigweed , Datura stramonium jimson weed , Linaria ... TEVinc.html Inclusions of Tobacco etch virus in various hosts . Geographic Distribution TEV ... LC pepper TEV.pdf Tobacco Etch Virus Pepper Diseases http www.avrdc.org pdf tomato TEV.pdf Tobacco Etch Virus Tomato Diseases http www.acdiainc.com TEV.htm Tobacco Etch Virus DAS ELISA http phene.cpmc.columbia.edu ICTVdB 00.057.0.01.067.htm ICTVdB The Universal Virus Database Tobacco etch virus ... dpv showdpv.php?dpvno 258 Descriptions of Plant Viruses DPV DEFAULTSORT Tobacco Etch Virus ... more details
HARMST is an acronym for H igh A spect R atio M icrostructure T echnology that describes fabrication technologies, used to create high aspect ratio aspect ratio microstructures with heights between tens of micrometers up to a centimeter and aspect ratio aspect ratios greater than 10 1. Examples include the LIGA fabrication process, Advanced Silicon Etch advanced silicon etch , and deep reactive ion etching . See also LIGA Advanced Silicon Etch Deep Reactive Ion Etching Microelectromechanical systems High aspect ratio .28HAR.29 silicon micromachining Micromechanical Systems High Aspect Ratio HAR Micromachining External links http www.mancef.org node 56 The International LIGA interest group Category Materials science Category Microtechnology engineering stub ... more details
2011 ref Its products include etch system s, including dielectric etch products, conductor etch products ... Versys Kiyo silicon etch system extending advanced tuning capabilities for 65 nm 2003 Demonstrated ... dielectric etch system Achieved ISO 14001 environmental management system registration 2002 Launched 2300 Versys Star silicon etch system for sub 90 nm applications Released MyLam.com, a new ... online 2001 Introduced the TCP 9600DFM metal etch system for sub 150 nm processes ... process equipment 2000 Shipped 2,000th high density TCP etch chamber Launched 2300 Etch Series, offering ... Introduced next generation Exelan dielectric etch system employing Dual Frequency Confined DFC plasma ... 500th TCP Etch Series chamber Introduced improved DFC technology, 4520XLE dielectric etch system 1995 Introduced first product incorporating DFC technology, 4520XL dielectric etch system Achieved ... based products, the TCP 9400 for silicon etch and the TCP 9600 for metal etch 1990 Established presence ... 4400 Etch Series successor to AutoEtch for polysilicon etch 1985 Established a global presence Asia and Europe Introduced first oxide etch system, the AutoEtch 590 1984 Achieved IPO and listing on Nasdaq 1981 Introduced first product, the AutoEtch 480, for polysilicon etch 1980 Founded by David K. Lam ... more details
A hardmask is a material used in semiconductor processing as an etch mask in lieu of polymer or other organic soft resist materials. The idea is that polymers tend to be etched easily by oxygen , fluorine , chlorine or other reactive gases to the extent that a pattern defined using polymeric mask is rapidly degraded during plasma etching . material stub Category Semiconductor device fabrication ... more details
Unreferenced stub auto yes date December 2009 Orphan date December 2009 Polycide is a silicide formed over polysilicon . Widely used in DRAM s. In a polycide MOSFET transistor process, the silicide is formed only over the polysilicon film as formation occurs prior to any polysilicon etch. Polycide processes contrast with salicide processes in which silicide is formed after the polysilicon etch. Thus, with a salicide process, silicide is formed over both the polysilicon gate and the exposed monocrystalline terminal regions of the transistor in a self aligned gate self aligned fashion. Chemistry stub Category Semiconductor device fabrication Category Silicon it Saliciuro ... more details
wiktionary etching Etching may refer to Etching , a printmaking technique in art Etching glass , a glass decoration technique Etching metal , a metal decoration technique Industrial etching Etching microfabrication , a process in producing microelectronics Note that all of the above can be called chemical etching , though the term is mostly used for industrial etching. An etcher is most likely to mean a printmaker. An etchant sometimes mordant is any chemical used to etch, but probably refers to an industrial process. See also Etch disambiguation disambig sv Etsning ru de tzen eo Mordado es Fresado qu mico fr Gravure industrielle pt Fresagem qu mica sv Etsning kemi uk ... more details
taxobox image regnum Plantae unranked divisio Angiosperms unranked classis Monocots unranked ordo Commelinids ordo Poales familia Bromeliaceae genus Neoregelia species N. pascoaliana binomial Neoregelia pascoaliana binomial authority L.B. Smith Neoregelia pascoaliana is a species biology species of the genus biology genus Neoregelia . This is a species that is Endemism endemic to Brazil . Cultivars Neoregelia Etch a Sketch Neoregelia Etch a Sketch References http www.bsi.org brom info cultivar bcr.html BSI Cultivar Registry Retrieved 11 October 2009 http www.dpi.inpe.br referata arq 22 Rafael Bromelias Bromelia Mata Atlantica.pdf BROMELIACEAE DA MATA ATL NTICA BRASILEIRA retrieved 22 October 2009 Category Flora of Brazil Category Neoregelia pascoaliana Category Bromeliaceae species neoregelia stub ... more details
and oxygen etch gases condensate on the sidewalls, and protect them from lateral etching. As a combination ... that produces isotropic etching. However, ion s continue to bombard upward facing surfaces and etch ... with cryo DRIE is that the standard masks on substrates crack under the extreme cold, plus etch by products ... isotropic plasma etch . The plasma contains some ions, which attack the wafer from a nearly vertical ... etchant. These etch deposit steps are repeated many times over resulting in a large number of very small isotropic etch steps taking place only at the bottom of the etched pits. To etch through a 0.5 mm silicon wafer, for example, 100 1000 etch deposit steps are needed. The two phase process ... can be adjusted short cycles yield smoother walls, and long cycles yield a higher etch rate. Applications ... DRIE from RIE is etch depth Practical etch depths for RIE as used in integrated circuit IC manufacturing would be limited to around 10 m at a rate up to 1 m min, while DRIE can etch ... chemically amplified negative resists. Gallium ion implantion can be used as etch mask in cryo DRIE ... more details
refimproveBLP date May 2009 Arthur Granjean invented Etch a sketch in the late 1950s. ref cite news url http news.google.com newspapers?id BfUkAAAAIBAJ&sjid oREGAAAAIBAJ&pg 690,1509984&dq arthur granjean&hl en title Who invented these popular toys? date 24 December 2003 work List of newspapers in Iowa Ogden Reporter pages 2 3 accessdate 28 January 2011 ref Granjean displayed his prototype, which he had built in his basement and called L Ecran Magique The Magic Screen , at the 1959 International Toy Exhibition. There, executives of the Ohio Art Company acquired the rights to produce it commercially. The classically simple, lineography lineographic , Etch a Sketch, which debuted during the Christmas shopping season of 1960, near the peak of the baby boom , is one of the best known toys of a generation and remains popular today. The Etch a Sketch is filled with a fine aluminum dust and a sylus than scrapes the dust which leaves the mark you see. When you shake it to erase more aluminum dust replaces it. References Reflist Persondata Metadata see Wikipedia Persondata . NAME Granjean, Arthur ALTERNATIVE NAMES SHORT DESCRIPTION DATE OF BIRTH PLACE OF BIRTH DATE OF DEATH PLACE OF DEATH DEFAULTSORT Granjean, Arthur Category Inventors Category Toy inventors Category Year of birth missing living people Category Living people inventor stub fr Arthur Granjean ... more details
The TEV protease is a highly site specific cysteine protease that is found in the Tobacco etch virus Tobacco Etch Virus TEV . The optimum recognition site for this enzyme is the sequence Glu Asn Leu Tyr Phe Gln Gly Ser ENLYFQ G S and cleavage occurs between the Gln and Gly Ser residues. ref name pmid12074568 cite journal author Kapust RB, T zs r J, Copeland TD, Waugh DS title The P1 specificity of tobacco etch virus protease journal Biochem. Biophys. Res. Commun. volume 294 issue 5 pages 949 55 year 2002 month June pmid 12074568 doi 10.1016 S0006 291X 02 00574 0 url ref Some of the advantages of this enzyme are its high specificity and its high activity rate. One of the main uses of this protein is for removing affinity tags from purified proteins. This peptidase belongs to the C4 peptidase family. The molecular weight of this enzyme varies between 25 and 27 kDa depending on the specific construct used. External links http mcl1.ncifcrf.gov waugh tech faq tev.pdf National Cancer Institute TEV FAQ https catalog.invitrogen.com index.cfm?fuseaction viewCatalog.viewProductDetails&productDescription 1009&catname North 20America 20Main Invitrogen s TEV Protease Product Page References reflist Category EC 3.4.22 enzyme stub ... more details
TEV may refer to TeV , or teraelectronvolt, a measure of energy Enterprise value Total Enterprise Value , a financial measure Total Economic Value , an economic measure Tobacco etch virus , a plant pathogenic virus of the family Potyviridae . Today s English Version, a former name for the Good News Bible TEV, a ship prefix for Turbo electric ship Vessel , usually with steam driven turbine s. Thermal expansion valve , a refrigeration system component disambig de TEV eo TEV it TEV no TEV ... more details
Unreferenced date August 2009 dablink For the railroad, see Kelowna Pacific Railway . dablink For the Kenyan police unit, see Kenya Police Reserve . KPR , originally known as Kodak Photoresist, is a photosensitive material used in photoengraving , Photogravure and photolithography . Once dried KPR can be dissolved by several solvents but after exposure to strong ultraviolet light it hardens and becomes insoluble by some of these solvents. It is also resistant to acid , Iron III chloride ferric chloride and other chemicals used to etch metals. Category Kodak photo stub ... more details
the appropriate gas etch chemistry that will form volatile products with the material to be etched ... articles References Reflist External links http www.clarycon.com plasmaetchfundam.html Plasma Etch Fundamentals ... more details
it is complete. For many etch steps, part of the wafer is protected from the etchant by a masking material ... . Figures of merit If the etch is intended to make a cavity in a material, the depth of the cavity may be controlled approximately using the etching time and the known etch rate. More often, though ... or masking layers. The etching system s ability to do this depends on the ratio of etch rates in the two ... Selectivity Image Etch selectivity.png 140px Yellow layer to be removed blue layer to remain A poorly selective etch removes the top layer, but also attacks the underlying material. A highly selective etch leaves the underlying material unharmed. Isotropy Image Etch anisotropy.png 140px Red masking layer yellow layer to be removed A perfectly isotropic etch produces round sidewalls. A perfectly anisotropic etch produces vertical sidewalls. Etching media and technology The two fundamental types ..., Buffered Oxide Etch buffered hydrofluoric acid BHF is used commonly to etch silicon dioxide ... side. It can be done to either the front side or back side. The etch chemistry is dispensed on the top side when in the machine and the bottom side is not affected. This etch method is particularly ... Orientation dependent etching File Anisotropic wet etching.svg thumb An anisotropic wet etch on a silicon ... see Miller indices , and the sides are 111 planes. The blue material is an etch mask, and the green material is silicon. Some wet etchants etch crystal line materials at very different rates depending ... an etch rate selectivity 400 times higher in 100 crystal directions than in 111 directions. EDP an aqueous solution of ethylene diamine and pyrocatechol , displays a 100 111 selectivity of 17X, does not etch ... D S frac sqrt 6 R 100 T R 100 R 111 sqrt 6 TR 111 math , where R sub xxx sub is the etch rate in the xxx direction, T is the etch time, D is the etch depth and S is the anisotropy of the material and etchant ... surface approximately the same as its downward etch rate, or can be anisotropic, i.e., exhibiting ... more details
increases the etch rate, whereas a separate RF bias is applied to the substrate silicon wafer to create directional electric fields near the substrate to achieve more anisotropic etch profiles. Method ..., reactive ion etching can produce very anisotropic etch profiles, which contrast with the typically isotropic profiles of Wet etching wet chemical etching . Etch conditions in an RIE system depend strongly ... plasmaetchfundam.html Plasma Etch Fundamentals http ncnc.engineering.ucdavis.edu pages equipment ... more details
unsourced date April 2009 Bulk micromachining is a process used to produce micromachinery or microelectromechanical systems MEMS . Unlike surface micromachining , which uses a succession of thin film deposition and selective etching, bulk micromachining defines structures by selectively etching inside a substrate. Whereas surface micromachining creates structures on top of a substrate, bulk micromachining produces structures inside a substrate. Usually, silicon Wafer electronics wafer s are used as substrates for bulk micromachining, as they can be anisotropic ally wet etched, forming highly regular structures. Wet etching typically uses alkaline liquid solvent s, such as potassium hydroxide KOH or tetramethylammonium hydroxide TMAH to dissolve silicon which has been left exposed by the photolithography masking step. These alkali solvents dissolve the silicon in a highly anisotropic way, with some crystallographic orientations dissolving up to 1000 times faster than others. Such an approach is often used with very specific crystallographic orientations in the raw silicon to produce V shaped grooves. The surface of these grooves can be atomically smooth if the etch is carried out correctly, and the dimensions and angles can be precisely defined. Bulk micromachining starts with a silicon wafer or other substrates which is selectively etched, using photolithography to transfer a pattern from a mask to the surface. Like surface micromachining, bulk micromachining can be performed with wet or dry etches, although the most common etch in silicon is the anisotropic wet etch. This etch takes advantage of the fact that silicon has a crystal structure, which means its atoms are all arranged periodically in lines and planes. Certain planes have weaker bonds and are more susceptible to etching. The etch results in pits that have angled walls, with the angle being a function of the crystal orientation of the substrate. This type of etching is inexpensive and is generally used in ... more details
Image Lineographic Dauphin Coat of Arms.jpg thumb right 250px A lineographic representation of the coat of arms arms of the Dauphin of France . The arms were created by Jean de Beaugrand from his Panchrestographie published in Paris in 1604. Lineography is the art of drawing without lifting the pen, pencil, or paintbrush that is being used. ref name Maloney Citation surname Davis given Ken Authorlink title Thinking Inside the Box journal Unitrin Specialty Update volume issue date 2007 01 02 Page 10 url http leannmaloney.com sitebuildercontent sitebuilderfiles unitrinspecialtyupdatev2 jan07.pdf ref The practice originated in France in the seventeenth century and had fallen into disuse by the early nineteenth century. ref name Hanton2 cite book last Hanton first George title French Lineography publisher Gregory Kline Books location New York year 1927 isbn oclc doi page 2 ref In some instances, entire landscapes and still lifes have been drawn or painted using this lineographic technique. ref name Hanton27 cite book last Hanton first George title French Lineography publisher Gregory Kline Books location New York year 1927 isbn oclc doi page 27 ref There are also examples of famous works of art, such as the Mona Lisa being reproduced in this way. ref name SPEEPLE cite web url http news.speeple.com neatorama.com 2007 09 14 mona lisa in etch a sketch.htm title Mona Lisa in Etch A Sketch accessdate 2008 02 01 last first date 2007 09 14 publisher Speeple News ref Lineography experienced a resurgence in 1960 with the release of the Etch A Sketch . ref name Maloney A generation of young people used this toy to produce images that were made from one continuous line. Notable lineographers Jean de Beaugrand Arthur Granjean George Hanton References reflist Category 17th century works Category Baroque painting Category Drawing Category Artistic techniques art stub fr Trait de plume ... more details
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